may 2009 1 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type i c .................................................................. 200 a v ces ...................................................... 6500 v high insulated type 1-element in a pack aisic baseplate application t raction drives, high reliability converters / inverters, dc choppers CM200HG-130H outline drawing & circuit diagram dimensions in mm 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules circuit diagram >pet+pbt< >pet+pbt< eg c 1 2 +1.0 0 depth min. 4 screwing depth min. 16.5 e (1) c (2) e g c 48 4- 7 mounting holes 2-m8 nuts 5 0.15 73 0.5 57 0.25 17 0.1 140 0.5 124 0.25 41 0.3 40.4 0.5 22 0.3 17.4 0.3 tab #110. t = 0.5 2.8 0.1 5 0.1 21.6 0.3 12.9 0.3 16.2 0.3 5.8 0.1 36.2 0.3 44 0.3 label
may 2009 2 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules maximum ratings symbol item conditions t j = ?0 c t j = +25 c t j = +125 c ratings unit v ces v ges i c i cm i e i em p c v iso v e t j t op t stg t psc collector-emitter voltage gate-emitter voltage collector current emitter current (note 2) maximum power dissipation (note 3) isolation voltage pa r tial discharge extinction voltage j unction temperature operating temperature storage temperature maximum short circuit pulse width v ge = 0v v ce = 0v, t j = 25 c dc, t c = 80 c pulse (note 1) dc pulse (note 1) t c = 25 c, igbt part rms, sinusoidal, f = 60hz, t = 1 min. rms, sinusoidal, f = 60hz, q pd 10 pc v cc = 4500v, v ce v ces , v ge = 15v, t j = 125 c 5800 6300 6500 20 200 400 200 400 2900 10200 5100 ?0 ~ +150 ?0 ~ +125 ?0 ~ +125 10 v v a a a a w v v c c c s electrical characteristics symbol item conditions t j = 25 c t j = 125 c 5.0 ?.5 10 6.0 41.0 2.5 0.7 3.3 4.50 4.60 1.20 0.35 1.50 8.20 0.50 3.10 1.20 4.00 3.60 1.00 2.40 370 0.70 3 30 7.0 0.5 ty p limits max min unit i ces v ge(th) i ges c ies c oes c res q g v ce(sat) t d(on) t r e on(10%) t d(off) t f t f2 e off(10%) v ec t rr t rr2 q rr e rec(10%) collector cutoff current gate-emitter threshold voltage gate leakage current input capacitance output capacitance reverse transfer capacitance t otal gate charge collector-emitter saturation v oltage tu r n-on delay time tu r n-on rise time tu r n-on switching energy (note 5) tu r n-off delay time tu r n-off fall time tu r n-off fall time tu r n-off switching energy (note 5) emitter-collector voltage (note 2) reverse recovery time (note 2) reverse recovery time (note 2) reverse recovery charge (note 2) reverse recovery energy (note 2), (note 5) v ce = v ces , v ge = 0v v ce = 10 v, i c = 20 ma, t j = 25 c v ge = v ges , v ce = 0v, t j = 25 c v ce = 10 v, v ge = 0 v, f = 100 khz, t j = 25 c v cc = 3600 v, i c = 200 a, v ge = 15 v, t j = 25 c i c = 200 a (note 4) v ge = 15 v v cc = 3600 v, i c = 200 a, v ge = 15 v r g(on) = 30 ? , t j = 125 c, l s = 220 nh t (igbt_off) = 60 s (note 6) , inductive load v cc = 3600 v, i c = 200 a, v ge = 15 v r g(off) = 100 ? , t j = 125 c, l s = 220 nh inductive load i e = 200 a (note 4) v ge = 0 v v cc = 3600 v, i e = 200 a, v ge = 15 v r g(on) = 30 ? , t j = 125 c, l s = 220 nh t (igbt_off) = 60 s (note 6) , inductive load ma v a nf nf nf c v s s j/p s s s j/p v s s c j/p t j = 25 c t j = 125 c t j = 25 c t j = 125 c
may 2009 3 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules thermal characteristics symbol item conditions 18.0 42.0 66.0 ty p limits max min unit r th(j-c)q r th(j-c)r r th(c-f) thermal resistance thermal resistance contact thermal resistance j unction to case, igbt part j unction to case, fwdi part case to fin, g rease = 1w/m?, d(c-f) = 100 m k/kw k/kw k/kw mechanical characteristics symbol item conditions 7.0 3.0 1.0 600 26 56 0.5 54 0.38 15.0 6.0 3.0 ty p limits max min unit m t m s m t m cti d a d s l p ce r cc?ee mounting torque mass comparative tracking index clearance creepage distance internal inductance internal lead resistance m8: main terminals screw m6: mounting screw m4: auxiliary terminals screw t c = 25 c n? n? n? kg mm mm nh m ? note 1. pulse width and repetition rate should be such that junction temperature (t j ) does not exceed t opmax rating (125 c). 2. the symbols represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 3. junction temperature (t j ) should not exceed t jmax rating (150 c). 4. pulse width and repetition rate should be such as to cause negligible temperature rise. 5. e on(10%) / e off(10%) / e rec(10%) are the integral of 0.1v ce x 0.1i c x dt. 6. t (igbt_off) definition is shown as follows. ic t (igbt_off) time
may 2009 4 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type fig. 1 ?definitions of switching times & energies of igbt part fig. 2 ?definitions of reverse recovery charge & energy of fwdi part hvigbt (high voltage insulated gate bipolar transistor) modules 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules 90%i c 10%v ge 90%v ge 90%i c 50%i c 10%i c dt di 10%i c 10%v ce 10%v ce v ce eon = ic?ce dt t2 t1 i c v cc v ge td(on) td(off) tf2 tr ton t1 t2 t3 t4 eoff = ic?ce dt tf = (0.9ic?.1ic)/(di/dt) toff = td(off)+tf t4 t3 0 0 di/dt trr dt 10%v ec v ec (v r ) 10%i e di irr trr2 t5 t6 0 qrr = ie dt t6 0 erec = ie?ec dt t6 t5 i e (i f ) 0 0
may 2009 5 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules performance curves output characteristics ( typical ) collector-emitter voltage ( v ) collector current ( a ) transfer characteristics ( typical ) gate-emitter voltage ( v ) collector current ( a ) collector-emitter saturation voltage ( v ) collector-emitter saturation voltage characteristics ( typical ) emitter-collector voltage ( v ) emitter current ( a ) free-wheel diode forward characteristics ( typical ) collector current ( a ) 300 400 200 100 0 0246 8 02468 6 8 4 2 0 10 12 300 400 200 100 0 300 400 200 100 0 300 400 200 100 0 0246 8 t j = 25 c t j = 125 c t j = 25 c t j = 125 c t j = 25 c t j = 125 c v ge = 15v v ce = 20v t j = 125 c v ge = 8v v ge = 20v v ge = 10v v ge = 12v v ge = 15v
may 2009 6 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules 0 100 200 300 400 500 0 1 2 3 4 0 0 1 2 3 4 10 2 10 3 10 1 10 0 10 0 10 -1 23 57 10 1 10 2 23 57 23 57 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 capacitance characteristics ( typical ) collector-emitter voltage ( v ) capacitance ( nf ) gate charge characteristics ( typical ) gate charge ( c ) gate-emitter voltage ( v ) collector current ( a ) switching energies ( j/p ) half-bridge switching energy characteristics ( typical ) -15 -10 -5 0 5 10 15 20 4 23 1 0 200 100 150 50 half-bridge switching energy characteristics ( typical ) gate resistor ( ? ) switching energies ( j/p ) v cc = 3600v, i c = 200a v ge = 15v, t j = 125 c inductive load 10 -1 v ce = 3600v, i c = 200a t j = 25 c e rec e off c ies c oes c res v cc = 3600v, v ge = 15v r g(on) = 30 ? , r g(off) = 100 ? t j = 125 c, inductive load e on v ge = 0v, t j = 25 c f = 100khz e rec e off e on
may 2009 7 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules collector current ( a ) switching times ( s ) half-bridge switching time characteristics ( typical ) emitter current ( a ) reverse recovery time ( s ) free-wheel diode reverse recovery characteristics ( typical ) reverse recovery current ( a ) 10 3 10 4 10 2 10 1 10 1 10 2 10 0 10 -1 2 3 5 7 2 3 5 7 2 3 5 7 10 1 10 2 10 0 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 -2 10 -3 23 57 10 -1 23 57 10 0 23 57 10 1 23 57 time ( s ) transient thermal impedance characteristics normalized transient thermal impedance 1.2 1.0 0.8 0.6 0.4 0 0.2 10 1 4 23 57 4 23 57 10 3 10 2 10 1 4 23 57 4 23 57 10 3 10 2 10 -1 t d(off) t d(on) t f t r v cc = 3600v, v ge = 15v r g(on) = 30 ? , r g(off) = 100 ? t j = 125 c, inductive load v cc = 3600v, v ge = 15v r g(on) = 30 ? , r g(off) = 100 ? t j = 125 c, inductive load l rr t rr r th(j?)q = 42k/kw r th(j?)r = 66k/kw zr th( j ? ) ( t ) = n i=1 i 1?xp t i t ? ? ? ? r i [k/kw] i [sec] 1 0.0059 0.0002 2 0.0978 0.0074 3 0.6571 0.0732 4 0.2392 0.4488
may 2009 8 mitsubishi hvigbt modules CM200HG-130H high power switching use insulated type 3rd-version hvigbt (high voltage insulated gate bipolar transistor) modules hvigbt (high voltage insulated gate bipolar transistor) modules collector-emitter voltage ( v ) collector current ( a ) reverse bias safe operating area ( rbsoa ) 500 100 200 300 400 0 5000 1000 2000 3000 4000 0 500 100 200 300 400 0 0 2000 4000 0 6000 8000 collector-emitter voltage ( v ) collector current ( a ) short circuit safe operating area (scsoa) 2000 4000 0 6000 8000 2000 4000 6000 8000 collector-emitter voltage ( v ) reverse recovery current ( a ) free-wheel diode reverse recovery safe operating area ( rrsoa ) v cc 4500v, di/dt 1000a/ s t j = 125 c v cc 4500v, v ge = 15v t j = 125 c, r g(off) 100 ? v cc 4500v, v ge = 15v t j = 125 c, r g(off) 100 ?
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